Adam Babiński
81. A. Babinski, M. Czyż, J. Borysiuk, S. Kret, A. Golnik, S. Raymond, J.Lapointe, and Z.R.Wasilewski
"Neutral and charged excitons localized in the InAs/GaAs wetting layer"
Acta Physica Polonica A, 114, 1055 (2008)
80. The following article appeared in Appl. Phys. Lett. 92,
171104 (2008) :
A. Babiński, J.Borysiuk, S.Kret, M.Czyz, A.Golnik, S.Raymond, and Z.R.Wasilewski,
" Natural quantum dots in the InAs/GaAs wetting layer"
and may be found at
(AIP
Webpage) Copyright (2008) American Institute of Physics. This article
may be downloaded for personal use only. Any other use requires prior
permission of the author and the American Institute of Physics.
79. A. Babinski, M. Potemski, S. Raymond and Z. Wasilewski
"Charged and neutral excitons in natural quantum dots in the
InAs/GaAs wetting layer"
Physica E, 40, 2078 (2008)
78. M. Korkusinski, P. Hawrylak, A. Babinski, M. Potemski, S. Raymond and Z. Wasilewski
"Optical readout of charge and spin in a self-assembled quantum dot in a strong magnetic field"
Europhysics Letters 79, 47005 (2007)
77. A. Babinski, M. Potemski, S. Raymond, J. Lapointe, Z. R. Wasilewski, and J. M. Baranowski,
"Excitonic Fock-Darwin Spectrum of a Single Quantum Dot" in
PHYSICS OF SEMICONDUCTORS: 28th International Conference on the Physics of Semiconductors
AIP Conference Proceedings 893, 905 (2007)
76. Weidong Sheng and A. Babiński,
"Zero g factors and nonzero orbital momenta in self-assembled quantum dots"
Phys. Rev. B 75 , 033316 (2007)
75. J.Siwiec-Matuszyk, M. Baj, A. Babiński, J. Kasprzak,
"Influence of Intersubband Scattering on the Magnetic Field Dependence of the Conductivity Tensor "
Acta Physica Polonica A 110 337 (2006)
74. A. Babiński, M. Potemski, S.Raymond, J.Lapointe, and Z.Wasilewski,
" Fock-Darwin spectrum of a single InAs/GaAs quantum dot"
phys. stat. sol. (c) 3 3748–3751 (2006)
73. A. Babiński, M. Potemski, S.Raymond, J.Lapointe, and Z.Wasilewski,
" Emission from a highly excited single InAs-GaAs quantum dot in magnetic fields:
An excitonic Fock-Darwin diagram"
Phys. Rev. B 74 , 155301 (2006)
72. K. Korona, A. Babiński, S.Raymond, and Z.Wasilewski,
" Dynamics of Excitation Transfer Inside InAs/GaAs Quantum Dot System"
Acta Physica Polonica A 110 , 219 (2006)
71. A. Babiński,
" Optical spectroscopy of Quantum Dots in High Magnetic Fields"
Acta Physica Polonica A 110 , 275 (2006)
70. A. Babiński, M. Potemski, S.Raymond, M. Korkusinski, W.Sheng, P. Hawrylak, and Z.Wasilewski,
" Optical spectroscopy of a single InAs/GaAs quantum dot in high magnetic fields"
Physica E 34 , 288 (2006)
69. A. Babiński, G. Ortner, S.Raymond, M. Potemski, M. Bayer, W.Sheng, P. Hawrylak, Z.Wasilewski, S.Fafard,
and A. Forchel,
" Ground-state emission from a single InAs/GaAs quantum dot structure in ultrahigh magnetic fields"
Phys. Rev. B 74 , 075310 (2006)
68. The following article appeared in Appl. Phys. Lett.88,
051909 (2006) :
A. Babiński, M.Potemski, and H.Shtrikman
" Quantum oscillations of the luminescence from a modulation-doped GaAs/InGaAs/GaAlAs quantum well"
and may be found at
(AIP
Webpage) Copyright (2006) American Institute of Physics. This article
may be downloaded for personal use only. Any other use requires prior
permission of the author and the American Institute of Physics.
67. M. Korkusinski, W. Sheng, P. Hawrylak, Z. Wasilewski, G. Ortner, M. Bayer, A. Babinski,
and M. Potemski,
Electron and Hole States in Vertically Coupled Self-Assembled InGaAs Quantum Dots"
PHYSICS OF SEMICONDUCTORS: Proceedings of the 27th Int. Conf. on the Physics of Semiconductors ed. by José Menéndez and Chris G. Van de Walle,
AIP Conference Proceedings 772, 685 (2005)
66. Barbara Chwalisz, Andrzej Wysmołek, Roman Stępniewski, A. Babiński, M Potemski, V Thierry-Mieg,
"Magneto-luminescence of a single lateral island formed in a type - II GaAs / AlAs QW"
International Journal of Modern Physics, 18, 3807 (2004)
65. G. Ortner, I. Yugova, G. Baldassarri Höger von Högersthal, A. Larionov, H. Kurtze, D. R. Yakovlev, M. Bayer,
S. Fafard, Z. Wasilewski, and P. Hawrylak, Y. B. Lyanda-Geller,T. L. Reinecke, A. Babiński, M. Potemski,
V. B. Timofeev and A. Forchel,
" Fine structure in the excitonic emission of InAs/GaAs quantum dot molecules"
Phys. Rev. B 71 , 125335 (2005)
64. A. Babiński, S. Awirothananon, J. Lapointe, Z.Wasilewski, S. Raymond, and M. Potemski,
"Single-Dot Spectroscopy in High Magnetic Fields", Physica E, 26, 1-4, 190 (2005)
63. A. Wysmołek, B. Chwalisz, M. Potemski, R.Stępniewski, A. Babiński, S. Raymond, V Thierry-Mieg,
" Emission from Mesoscopic-Size Islands Formed in GaAs / AlAs Double Layer Structure ",
Acta Phys. Pol. A, 106, 367 (2004)
62. A. Babiński, S. Raymond, Z.Wasilewski, J.Lapointe, and M. Potemski,
"Localization of Excitons in the Wetting layer Accompanying Self-Assembled InAs/GaAs Quantum Dots",
Acta Phys. Pol. A, 105, 547 (2004)
61. S. Awirothananon, W.D.Sheng, A. Babiński,
S. Studenikin, S. Raymond, A. Sachrajda, M. Potemski, S. Fafard, G. Ortner, and M. Bayer,
"Electronic and Structural Properties of Interdiffused Self-Assembled Quantum Dots from Magneto-Photoluminescence ",
Jap. Journal of Appl. Phys. 43, No. 4B, 2088 (2004)
60. D.Smirnov, S.Raymond, S.Studenikin, A.Babiński ,
J.Leotin, P.Frings, M.Potemski,A.Sachrajda,
"Electronic structure of InAs/GaAs self-assembled quantum dots studied by high-excitation luminescence in magnetic fields up to 73T,
", Physica B, 346-347, 432 (2004)
59. S. Raymond, S. Studenikin, A. Sachrajda, Z. Wasilewski, S. J. Cheng, W.
Sheng, P. Hawrylak, Adam Babiński, M. Potemski, G. Ortner, and M. Bayer,
"Excitonic Energy Shell Structure of Self-Assembled InGaAs/GaAs Quantum Dots
", Physical Review Letters 92,187402 (2004)
58. A. Babiński, S. Awirothananon, S.
Raymond, S. Studenikin, P. Hawrylak, S. -J. Cheng, W. Sheng, Z. Wasilewski, M.
Potemski , and A. Sachrajda,
"Photoluminescence excitation spectroscopy of InAs/GaAs quantum dots in high magnetic field", Physica
E, 22, 603 (2004)
57. J-N Isaia, A.Babiński ,L-A
de Vaulchier, M.Potemski, Y.Guldner,and J-M Gerard,
"Enhanced exciton-LO phonon coupling in doped quantum dots", Physica E, 21,
400 (2004)
56. S.J.Cheng, W.Sheng,
P.Hawrylak, S.Raymond, S.Studenikin, A.Sachrajda, Z.Wasilewski, A.Babiński ,
M.Potemski, G.Ortner, and M.Bayer,
"Electron-hole complexes in self-assembled quantum dots in strong magnetic
field", Physica E, 21, 211 (2004)
55. A.Babiński , M.Potemski, H.Shtrikman,
"Luminescence of a dense two-dimensinal electron gas involving free-and bound
holes in the GaAs/InGaAs/AlGaAs quantum wells",
Physics of Semiconductors 2002, Proceedings of the 26th ICPS, Edinburgh 2002,
ed. A.R.Long and J.H.Davies, Inst. of Physics Conference Series 171, Bristol
and Philadelphia 2002, H61
54. A. Drabińska, K. P. Korona, R. Bożek, A. Babiński, J. M.
Baranowski, W. Pacuski, R. Stępniewski, and T. Tomaszewicz,
"Determination
of Si d-doping concentration in GaN by Electroreflectance", phys.
stat. sol. (b) 234, 868 (2002)
53. Self-Assembled Quantum Dots in Electric Field , in " Quantum Dots and Nanowires"
American Scientific Publishers, 2002
52. The following article appeared in J. Appl. Phys. 92,
163 (2002)
Aneta Drabińska, A. Babiński, T. Tomaszewicz, R. Bożek, and J. M.
Baranowski
" Optical determination of
the dopant concentration in the d-doping layer"
and may be found at (AIP
Webpage) Copyright (2002) American Institute of Physics. This article
may be downloaded for personal use only. Any other use requires prior
permission of the author and the American Institute of Physics.
51. A. Babiński , M.Potemski, and H.Shtrikman
Free-to-bound
and interband recombination in the photoluminescence of a dense two-dimensional
electron gas
Phys. Rev. B 65 , 233307 (2002)
50. A. Babiński and J.Jasiński
Post-growth thermal
treatment of self-assembled InAs/GaAs quantum dots
Thin Solid Films 412/1-2 84 (2002)
49. L.V.Dao, M.Gal, A.Babiński, and J.Jagadish;
" Ultrafast time-resolved photoluminescence measurements
on InGaAs/GaAs Quantum Dots "
COMMAD 2000. Conference Proceedings. Conference on
Optoelectronic and Microelectronic Materials and Devices (Cat. No.00EX466), ed.
L.Broekman, B.Usher, and J. Riley, IEEE,
48. E.Ilczuk, K.P.Korona, A. Babiński, and J.Kuhl,
"The
Dynamics of Photoexcited Carriers in GaInAs/GaAs Quantum Dots"
Acta Phys.Pol. A 100, 379 (2001)
47. The following article appeared in Appl. Phys. Lett. 79,
2576 (2001)
A.Babiński, J.Jasiński, R. Bożek, A. Szepielow, and J.M. Baranowski;
" Rapid thermal annealing of InAs/GaAs quantum
dots under GaAs proximity-cap "
and may be found at (AIP
Webpage) Copyright (2001) American Institute of Physics. This article
may be downloaded for personal use only. Any other use requires prior
permission of the author and the American Institute of Physics.
46. K. P.Korona, A.Babiński, J.Kuhl, J.M.Baranowski, and R.Leon;
"Step-like
Photoluminescence Dynamics in Field-Effect Structures Containing Quantum
Dots"
phys. stat. sol. (b) 227, 605 (2001)
45. Z. Dziuba, M. Górska, J. Antoszewski, A.Babiński, P. Kozodoy,
S. Keller, B. Keller , S. P. DenBaars, and U. K. Mishra;
" Quantum corrections to the electrical conduction in an AlGaN/GaN
heterostructure "Applied Physics A 72, 691 (2001)
44. A.Babiński, R. Kulawiński, T. Tomaszewicz, J.M. Baranowski;
" Optical determination of delta -doping
concentration in semiconductor structures "
ASDAM 2000. Conference Proceedings. Third International EuroConference on
Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386). IEEE,
43. The following article appeared in Appl. Phys. Lett. 78,
3992 (2001) and may be found at (AIP Webpage)
A.Babiński, P.Witczak, A.Twardowski, and J.M.Baranowski;
"Electroluminescence from a forward-biased
Schottky barrier diode on modulation Si d-doped pseudomorphic
GaAs/InGaAs/AlGaAs heterostructure "
Copyright (2001) American Institute of Physics. This article may be
downloaded for personal use only. Any other use requires prior permission of
the author and the American Institute of Physics.
42. A.Babiński, J.M. Baranowski, R.Leon, and C. Jagadish
"Field-Effect Structure with Double layer of InGaAs/GaAs Quantum Dots - a
new concept of Electron Tunneling Device "
Semiconductor Quantum Dots II - 2000, Mater. Res. Soc. Proc. 642,
J.4.6.1;
41. J.Jasiński, A.Babiński, R. Bożek, A. Szepielow, and J.M.
Baranowski,
"Effects of Annealing on Self-Assembled InAs Quantum Dots and Wetting
Layer in GaAs Matrix;
Semiconductor Quantum Dots II - 2000, Mater. Res. Soc. Proc. 642,
J3.39.1;
40. J.Jasiński, A.Babiński, M.Czeczott, and R.Bożek,
"InGaAs/GaAs quantum dot interdiffusion induced by cap layer
overgrowth"
Morphological and Compositional Evolution of Heteroepitaxial Semiconductor Thin
Films ed. Millunchick JM; Barabasi AL; Modine NA; Jones ED., Mater. Res. Soc.
Proc. 618, pp.179-84.
39. A.Babiński, P.Witczak, S.Lavorik, and A.Twardowski,
"Low-temperature light emission in a forward-biased Schottky diode with a n-doped channel"
2000 International Semiconducting and Insulating Materials Conference. SIMC-XI
(Cat. No.00CH37046). IEEE,
38. J.Jasiński, A.Babiński, R.Bożek, and J.M.Baranowski,
"Post-growth thermal treatment of InAs/GaAs quantum dots"
2000 International Semiconducting and Insulating Materials Conference. SIMC-XI
(Cat. No.00CH37046). IEEE,
37. A.Babiński, K.P.Korona, and J.M.Baranowski,
"The effect of electric field on the self-organized quantum dots"
2000 International Semiconducting and Insulating Materials Conference. SIMC-XI
(Cat. No.00CH37046). IEEE,
36. The following article appeared in Appl. Phys. Lett. 77,
999 (2000) and may be found at (AIP Webpage)
A.Babiński, J.Siwiec-Matuszyk, J.M.Baranowski, G.Li, and C.Jagadish,
"Transport and quantum electron mobility in the
modulation Si d-doped pseudomorphic GaAs/InGaAs/AlGaAs quantum well grown by
metalorganic vapor phase epitaxy"
Copyright (2000) American Institute of Physics. This article may be
downloaded for personal use only. Any other use requires prior permission of
the author and the American Institute of Physics.
35. A.Babiński
"Photoluminescence from InGaAs/GaAs Quantum dots in high electric
field"
NATO ANSI Conf. Ser. Optical properties of Semiconductor Nanostructures ed by
M.L.Sadowski, M.Potemski, and M.Grynberg, Kluver Academic Publishers, p. 395
34. T.Tomaszewicz, A.Babiński , D.Suska,
J.M.Baranowski,
"Electroreflectance Bias-Wavelength Mapping of the GaAs/InGaAs/AlGaAs
structure"
Inst. Phys. Conf. Ser. No 166, 143 (2000)
33. A.Babiński and J.M.Baranowski,
"The effect of electron occupation on the photoluminescence from the
self-organized InGaAs/GaAs quantum dots"
physica status solidi a 187, 313 (2000)
32. A.Babiński, T.Tomaszewicz, A.Wysmołek, J.M.Baranowski,
C.Lobo, R.Leon, and C.Jagadish,
"Optical properties of self-organized InGaAs/GaAs quantum dots in field
effect structures"
Microcrystalline and Nanocrystalline Semiconductors - 1998. Mater. Res. Soc.
Proc. 536, pp.269-74.
31. The following article appeared in Appl. Phys. Lett. 75,
2088 (1999) and may be found at (AIP Webpage)
T.Tomaszewicz, A.Babiński , D.Suska, J.M.Baranowski, and A.Tomaszewicz,
" Electroreflectance Bias-Wavelength Mapping of
the modulation Si d-doped pseudomorphic GaAs/InGaAs/AlGaAs structure"
Copyright (1999) American Institute of Physics. This article may be downloaded
for personal use only. Any other use requires prior permission of the author
and the American Institute of Physics.
30. The following article appeared in Appl. Phys. Lett. 73,
2811 (1998) and may be found at (AIP Webpage)
A.Babiński,A.Wysmołek, T.Tomaszewicz, J.M.Baranowski, R.Leon, C.Lobo,
and C.Jagadish,
"Electrically modulated photoluminescence in
self-organized InGaAs/GaAs quantum dots"
Copyright (1998) American Institute of Physics. This article may be downloaded
for personal use only. Any other use requires prior permission of the author
and the American Institute of Physics.
29. G.Li, M.B.Johnston, A.Babiński ,
S.Yuan, M.Gal, S.J.Chua, and C.Jagadish,
"Si
and C d-doping for device applications"
J.Cryst. Growth 195, 54 (98)
28. A.Babiński, G.Li, and C.Jagadish,
"Magnetotransport
measurements on modulation Si d-doped pseudomorphic InGaAs/GaAs quantum wells"
Physica B 246-247, 289 (1998)
27. The following article appeared in Appl. Phys. Lett. 72,
2322 (1998) and may be found at (AIP Webpage)
G. Li, A.Babiński, S. J. Chua and C. Jagadish,
"Electron Transfer Efficiency in Si d-Modulation
Doped Pseudomorphic GaAs/InGaAs/AlGaAs QWs"
Copyright (1998) American Institute of Physics. This article may be downloaded
for personal use only. Any other use requires prior permission of the author
and the American Institute of Physics.
26. A.Babiński, G.Li, and C.Jagadish,
"The effect of band bending on the transport properties of modulation
doped pseudomorphic InGaAs/GaAs quantum wells"
Proceedings of the 4th Vaccum Society of Australia Congress, Canberra 1997
25. The following article appeared in Appl. Phys. Lett. 71,
1664 (1997) and may be found at (AIP Webpage)
A.Babiński,G.Li, and C.Jagadish,
"The persistent photoconductivity effect in
modulation Si d-doped pseudomorphic InGaAs/GaAs quantum well structure"
Copyright (1997) American Institute of Physics. This article may be
downloaded for personal use only. Any other use requires prior permission of
the author and the American Institute of Physics.
24.A.Babiński, R.Leon, and C.Jagadish,
"Capacitance measurements on self-organised MOCVD grown InGaAs quantum
dots",
Proceedings of 1996 COMMAD-96 Conference, ed. C. Jagadish, Canberra 1996, p.183
23. The following article appeared in Appl. Phys. Lett. 70,
3582 (1997) and may be found at (AIP Webpage)
G.Li, A.Babiński, and C.Jagadish,
"Subband electron densities of Si delta-doped
pseudomorphic InGaAs/GaAs heterostructures"
Copyright(1997) American Institute of Physics. This article may be
downloaded for personal use only. Any other use requires prior permission of
the author and the American Institute of Physics.
22. R.Bożek, A.Babiński, J.M.Baranowski, R.Stępniewski, Z.
Klusek, W. Olejniczak, K. Starowieyski, and J.Wróbel,
"GaSb dots grown on GaAs surface by MOCVD",
Acta Phys. Pol. A 88, 974 (1995).
21. A.Babiński and J.M.Baranowski,
"Splitting of the acceptor level of the metastable EL2 under uniaxial
stress",
Proc. of 22nd ICPS,
20. A.Babiński, A.Wysmołek, and J.M.Baranowski,
"Splitting of the metastable EL2 acceptor state"
Phys. Rev. B 50, 10656 (1994).
19. T.Słupiński, A.Wysmołek, M.Leszczyński, A.Babiński,
A.Kurpiewski, A.Barcz, and R.Stępniewski,
"Single crystals of GaAsP grown by the Czochralski method,
"Semi-Insulating III-V Materials Conference, Warszawa 1994", ed.
M.Godlewski, 39.
18. A.Babiński and A.Wysmołek,
"Orientational degeneracy of the acceptor level of the metastable
EL2",
"Semi-Insulating III-V Materials Conference, Warszawa 1994", ed.
M.Godlewski, 221.
17. A.Babiński and A.Wysmołek,
"Orientation of the metastable EL2 under uniaxial stress",
Acta Phys. Pol. A 87, 137 (1995).
16. A.Babiński,
"Pokaz efektu Halla na sali wykladowej",
Postepy Fizyki, 45, (1994), 169 (in Polish)
15. A.Babiński, A.Wysmołek, and M.Baj,
"Symmetry of the acceptor-like state of the EL2 defect in the metastable
configuration",
Mat.Sc.Forum, vol. 143-147, 1051 (1994)
14. P.Trautman, J.M.Baranowski, and A.Babiński,
"Ordering of the EL2 defect in the metastable state",
Mat.Sc.Forum, vol. 143-147, 1007 (1994)
13. A.Babiński, A.Wysmołek, and T.Słupiński,
"DLTS measurements of an acceptor-like state of metastable EL2 in GaAs and
GaAsP",
Acta Phys. Pol., A 84, 673 (1993)
12. A.Wysmołek, R.Bozek, A.Babiński ,
and A.M.Hennel,
"Hydrostatic pressure spectroscopy of the vanadium luminescence in
GaAs",
Acta Phys.Pol. A 82, 837 (1992)
11. A. Babiński, J.Przybytek, M.Baj, P.Omling, L.Samuelson, and
T.Słupiński,
"Hydrostatic-pressure DLTS study of the heteroantisite antimony level in
GaAs",
Acta Phys.Pol. A 82, 841 (1992)
10. A.Babiński and A.Wysmołek,
"The electrical properties of an acceptor-like state of metastable EL2 in
n-type GaAs under uniaxial stres" ,
Acta Phys.Pol. A 82, 908 (1992)
9. A.Babiński, K.P.Korona, and A.M.Hennel,
"Properties of the Fe acceptor level in InP under hydrostatic
pressure",
"Semi-Insulating III-V Materials Conference, Ixtapa 1992", ed.
B.Ford, C.Miner, E.R.Weber, 253
8. M.Baj, P.Dreszer, and A.Babiński,
"Pressure-induced charge state of EL2 defect in its metastable state"
Phys. Rev. B 43, 2070 (1991)
7. J.Muszalski, A.Babiński, K.P.Korona, E.Kamińska, A.Piotrowska,
M.Kamińska, and E.R.Weber,
"First TSC and DLTS measurements of low temperature GaAs",
Acta Phys.Pol. A 80, 413 (1991)
6. A.Babiński and E.Gołdys,
"Passivation of a bulk defect EC-0.22eV in GaAs in phosphoric acid",
Acta Phys.Pol. A 79, 277 (1991)
5. A.Babiński, M.Baj, and A.M.Hennel,
"The pressure dependence of transition metal-related levels in GaAs",
Acta Phys.Pol. A 79, 323 (1991)
4. M.Baj, P.Dreszer, and A.Babiński,
"Acceptor-like level of the EL2 defect in its metastable
configuration",
Proc. of 20th ICPS Saloniki 1990, ed. E.M.Anastassakis,
3. M.Baj, P.Dreszer, and A.Babiński,
"Acceptor-like level of the EL2 defect in its
metastable configuration"
Acta Phys. Pol. A 79, 129 (1991)
2. K.P.Korona, K.Karpińska, A.Babiński,, and A.M.Hennel,
"Deep Level Transient Spectroscopy measurements of p-type InP",
Acta Phys. Pol. A 77, 71 (1990)
1. A.Babiński, J.M.Baranowski, and M.Czub,
"Deep Levels in GaAs prepared by VPE",
Acta Phys.Pol. A 77, 335 (1990)